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NVMFS6B05NT1G

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Rochester Electronics NVMFS6B05NT1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVMFS6B05NT1G
Description
MOSFET N-CH 100V 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVMFS6B05NT1G PDF
NVMFS6B05NT1G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3.1 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 165W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN
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