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FQB11P06TM

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Sanyo Semiconductor/ON Semiconductor FQB11P06TM

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQB11P06TM
Description
MOSFET P-CH 60V 11.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQB11P06TM PDF
FQB11P06TM Tech Specifications
SeriesQFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 53W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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