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TJ80S04M3L(T6L1,NQ

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Toshiba Electronic Devices and Storage Corporation TJ80S04M3L(T6L1,NQ

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TJ80S04M3L(T6L1,NQ
Description
MOSFET P-CH 40V 80A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TJ80S04M3L(T6L1,NQ PDF
TJ80S04M3L(T6L1,NQ Tech Specifications
SeriesU-MOSVI
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs158 nC @ 10 V
Vgs (Max)+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds7770 pF @ 10 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Request Quote Now
Request Quote Now

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