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FDB16AN08A0

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Rochester Electronics FDB16AN08A0

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDB16AN08A0
Description
MOSFET N-CH 75V 9A/58A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDB16AN08A0 PDF
FDB16AN08A0 Tech Specifications
SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.857 pF @ 25 V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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