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FDB0165N807L

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Sanyo Semiconductor/ON Semiconductor FDB0165N807L

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDB0165N807L
Description
MOSFET N-CH 80V 310A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDB0165N807L PDF
FDB0165N807L Tech Specifications
SeriesPowerTrench®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 36A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs304 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23660 pF @ 40 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
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