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SIS429DNT-T1-GE3

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Vishay / Siliconix SIS429DNT-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIS429DNT-T1-GE3
Description
MOSFET P-CH 30V 20A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIS429DNT-T1-GE3 PDF
SIS429DNT-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 15 V
FET Feature-
Power Dissipation (Max)27.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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