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SIHB6N65E-GE3

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Vishay / Siliconix SIHB6N65E-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHB6N65E-GE3
Description
MOSFET N-CH 650V 7A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHB6N65E-GE3 PDF
SIHB6N65E-GE3 Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 100 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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