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TP65H070LDG

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Transphorm TP65H070LDG

Manufacturer :
Transphorm
Mfr. Part # :
TP65H070LDG
Description
GANFET N-CH 650V 25A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TP65H070LDG PDF
TP65H070LDG Tech Specifications
SeriesTP65H070L
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN
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