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IPD33CN10NGATMA1

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IR (Infineon Technologies) IPD33CN10NGATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD33CN10NGATMA1
Description
MOSFET N-CH 100V 27A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD33CN10NGATMA1 PDF
In Stock
12000
IPD33CN10NGATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 27A, 10V
Vgs(th) (Max) @ Id4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 50 V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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