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GA10SICP12-263

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GeneSiC Semiconductor GA10SICP12-263

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
GA10SICP12-263
Description
TRANS SJT 1200V 25A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
GA10SICP12-263 PDF
GA10SICP12-263 Tech Specifications
Series-
PackageTube
Part StatusActive
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs100mOhm @ 10A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1403 pF @ 800 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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Request Quote Now

We can supply GA10SICP12-263, use the request quote form to request GA10SICP12-263 pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GA10SICP12-263. The price and lead time for GA10SICP12-263 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GA10SICP12-263. We look forward to working with you to establish long-term relations of cooperation.

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