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IPP126N10N3G

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Rochester Electronics IPP126N10N3G

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPP126N10N3G
Description
MOSFET N-CH 100V 58A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP126N10N3G PDF
In Stock
297
IPP126N10N3G Tech Specifications
SeriesOptiMOS™ 3
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
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