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SIR826BDP-T1-RE3

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Vishay / Siliconix SIR826BDP-T1-RE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIR826BDP-T1-RE3
Description
MOSFET N-CH 80V 19.8A/80.8A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIR826BDP-T1-RE3 PDF
In Stock
5858
SIR826BDP-T1-RE3 Tech Specifications
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C19.8A (Ta), 80.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3030 pF @ 40 V
FET Feature-
Power Dissipation (Max)5W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
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