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TK3A60DA(Q,M)

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Toshiba Electronic Devices and Storage Corporation TK3A60DA(Q,M)

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK3A60DA(Q,M)
Description
MOSFET N-CH 600V 2.5A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK3A60DA(Q,M) PDF
TK3A60DA(Q,M) Tech Specifications
Seriesπ-MOSVII
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 25 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
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