Vishay / Siliconix SI2393DS-T1-GE3

Manufacturer :: Vishay / Siliconix

Mfr. Part # :: SI2393DS-T1-GE3

Description: MOSFET P-CH 30V 6.1A/7.5A SOT23

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: SI2393DS-T1-GE3 PDF

SI2393DS-T1-GE3 Tech Specifications

Series		TrenchFET® Gen IV
Package		Tape & Reel (TR)Cut Tape (CT)
Part Status		Active
FET Type		P-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		30 V
Current - Continuous Drain (Id) @ 25°C		6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)		4.5V, 10V
Rds On (Max) @ Id, Vgs		22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id		2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs		25.2 nC @ 10 V
Vgs (Max)		+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds		980 pF @ 15 V
FET Feature		-
Power Dissipation (Max)		1.3W (Ta), 2.5W (Tc)
Operating Temperature		-55°C ~ 150°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		SOT-23-3 (TO-236)
Package / Case		TO-236-3, SC-59, SOT-23-3

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