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XPW6R30ANB,L1XHQ

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Toshiba Electronic Devices and Storage Corporation XPW6R30ANB,L1XHQ

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
XPW6R30ANB,L1XHQ
Description
MOSFET N-CH 100V 45A 8DSOP
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
XPW6R30ANB,L1XHQ PDF
XPW6R30ANB,L1XHQ Tech Specifications
SeriesU-MOSVIII-H
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3240 pF @ 10 V
FET Feature-
Power Dissipation (Max)960mW (Ta), 132W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-DSOP Advance
Package / Case8-PowerVDFN
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