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SPB21N50C3ATMA1

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IR (Infineon Technologies) SPB21N50C3ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
SPB21N50C3ATMA1
Description
MOSFET N-CH 560V 21A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SPB21N50C3ATMA1 PDF
SPB21N50C3ATMA1 Tech Specifications
SeriesCoolMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)560 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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