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IPP024N06N3GXKSA1

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Rochester Electronics IPP024N06N3GXKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPP024N06N3GXKSA1
Description
MOSFET N-CH 60V 120A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP024N06N3GXKSA1 PDF
IPP024N06N3GXKSA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs275 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23 pF @ 30 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
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Request Quote Now

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