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SIHH24N65E-T1-GE3

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Vishay / Siliconix SIHH24N65E-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHH24N65E-T1-GE3
Description
MOSFET N-CH 650V 23A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHH24N65E-T1-GE3 PDF
In Stock
3977
SIHH24N65E-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2814 pF @ 100 V
FET Feature-
Power Dissipation (Max)202W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN
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