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SQD50N10-8M9L_GE3

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Vishay / Siliconix SQD50N10-8M9L_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQD50N10-8M9L_GE3
Description
MOSFET N-CH 100V 50A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQD50N10-8M9L_GE3 PDF
SQD50N10-8M9L_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2950 pF @ 25 V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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