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SIS407ADN-T1-GE3

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Vishay / Siliconix SIS407ADN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIS407ADN-T1-GE3
Description
MOSFET P-CH 20V 18A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIS407ADN-T1-GE3 PDF
In Stock
3927
SIS407ADN-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs168 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds5875 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 39.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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Request Quote Now

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