Toshiba Electronic Devices and Storage Corporation TPN2010FNH,L1Q

Manufacturer :: Toshiba Electronic Devices and Storage Corporation

Mfr. Part # :: TPN2010FNH,L1Q

Description: MOSFET N-CH 250V 5.6A 8TSON

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: TPN2010FNH,L1Q PDF

TPN2010FNH,L1Q Tech Specifications

Series		U-MOSVIII-H
Package		Tape & Reel (TR)Cut Tape (CT)
Part Status		Active
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		250 V
Current - Continuous Drain (Id) @ 25°C		5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)		10V
Rds On (Max) @ Id, Vgs		198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id		4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs		7 nC @ 10 V
Vgs (Max)		±20V
Input Capacitance (Ciss) (Max) @ Vds		600 pF @ 100 V
FET Feature		-
Power Dissipation (Max)		700mW (Ta), 39W (Tc)
Operating Temperature		150°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		8-TSON Advance (3.3x3.3)
Package / Case		8-PowerVDFN

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