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IMBF170R650M1XTMA1

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IR (Infineon Technologies) IMBF170R650M1XTMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IMBF170R650M1XTMA1
Description
SICFET N-CH 1700V 7.4A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IMBF170R650M1XTMA1 PDF
IMBF170R650M1XTMA1 Tech Specifications
SeriesCoolSiC™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V, 15V
Rds On (Max) @ Id, Vgs650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 12 V
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds422 pF @ 1000 V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting Type-
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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