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SI7116BDN-T1-GE3

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Vishay / Siliconix SI7116BDN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI7116BDN-T1-GE3
Description
MOSFET N-CH 40V 18.4A/65A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI7116BDN-T1-GE3 PDF
SI7116BDN-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C18.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs7.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1915 pF @ 20 V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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