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TSM60NB099PW C1G

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TSC (Taiwan Semiconductor) TSM60NB099PW C1G

Manufacturer :
TSC (Taiwan Semiconductor)
Mfr. Part # :
TSM60NB099PW C1G
Description
MOSFET N-CHANNEL 600V 38A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TSM60NB099PW C1G PDF
TSM60NB099PW C1G Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2587 pF @ 100 V
FET Feature-
Power Dissipation (Max)329W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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