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FDD6N20TF

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Rochester Electronics FDD6N20TF

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDD6N20TF
Description
MOSFET N-CH 200V 4.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDD6N20TF PDF
FDD6N20TF Tech Specifications
SeriesUniFET™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 25 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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