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TSM80N1R2CI C0G

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TSC (Taiwan Semiconductor) TSM80N1R2CI C0G

Manufacturer :
TSC (Taiwan Semiconductor)
Mfr. Part # :
TSM80N1R2CI C0G
Description
MOSFET N-CH 800V 5.5A ITO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TSM80N1R2CI C0G PDF
TSM80N1R2CI C0G Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.4 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds685 pF @ 100 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab
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