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ESH3B-M3/9AT

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Vishay General Semiconductor – Diodes Division ESH3B-M3/9AT

Manufacturer :
Vishay General Semiconductor – Diodes Division
Mfr. Part # :
ESH3B-M3/9AT
Description
DIODE GEN PURP 100V 3A DO214AB
Catalog
Diodes - Rectifiers - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
ESH3B-M3/9AT PDF
ESH3B-M3/9AT Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If900 mV @ 3 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)40 ns
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F70pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 175°C
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