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NSB8JT-E3/81

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Vishay General Semiconductor – Diodes Division NSB8JT-E3/81

Manufacturer :
Vishay General Semiconductor – Diodes Division
Mfr. Part # :
NSB8JT-E3/81
Description
DIODE GEN PURP 600V 8A TO263AB
Catalog
Diodes - Rectifiers - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSB8JT-E3/81 PDF
NSB8JT-E3/81 Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 8 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 600 V
Capacitance @ Vr, F55pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-55°C ~ 150°C
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