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1N6483HE3/97

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Vishay General Semiconductor – Diodes Division 1N6483HE3/97

Manufacturer :
Vishay General Semiconductor – Diodes Division
Mfr. Part # :
1N6483HE3/97
Description
DIODE GEN PURP 800V 1A DO213AB
Catalog
Diodes - Rectifiers - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
1N6483HE3/97 PDF
1N6483HE3/97 Tech Specifications
SeriesSUPERECTIFIER®
PackageTape & Reel (TR)
Part StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 800 V
Capacitance @ Vr, F8pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-213AB, MELF (Glass)
Supplier Device PackageDO-213AB
Operating Temperature - Junction-65°C ~ 175°C
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