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HN1B04FE-GR,LF

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Toshiba Electronic Devices and Storage Corporation HN1B04FE-GR,LF

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
HN1B04FE-GR,LF
Description
TRANS NPN/PNP 50V 0.15A ES6
Catalog
Transistors - Bipolar (BJT) - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HN1B04FE-GR,LF PDF
HN1B04FE-GR,LF Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
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